FDS6675BZ MOSFET Power Electronics 8-SOIC Package P-Channel PowerTrench®in Notebook Computers
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
General Description
This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers
and Portable Battery Packs.
Features
Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 5.4 KV typical (note 3)
High performance trench tec hnology for extremely low rDS(on)
High power and current handing capability
RoHS Compliant
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FDS6675BZ MOSFET Power Electronics 8-SOIC Package P-Channel PowerTrench®in Notebook Computers Images
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